注F　CC4007电路的电离辐射效应

Ionizing Radiation Effects of Fluorinated CC4007 Circuits

本文分析研究了用注Ｆ工艺制作的ＣＣ４００７电路Ｃｏ６０γ辐照响应结果．实验表明、把适量的Ｆ引入栅介质，能明显减少辐射感生氧化物电荷积累和界面态的增长，从而引起较小的阈电压漂移和Ｎ沟静态漏电流的增长．器件导电类型和辐照栅偏压不改变注Ｆ栅介质的抗辐照特性．注Ｆ栅介质辐照敏感性的降低可归结为Ｆ能减小Ｓｉ／ＳｉＯ２界面应力、并部分替换在辐照场中易成为电荷陷阱的应力键和弱健等的缘故．

Abstract The ionizing radiation responses of fluorinated CC4007 circuits have been investigated. The experimental results have shown that by incorporating minute amounts of fluorine in thermal SiO2, the generation of interface states and oxide trapped charges can be restrained, resulting in less shifts of the threshold voltage and less increase of N channel leakage current. The radiation hardness of fluorine is undependent on the type of devices and irradiation gate bias. The less radiation sensitivity for fluorinated oxides should be attributed to the formation of Si-F bonds to substitute the other strained bonds which easily become charge traps under irradiation and to relax the bond stress at Si/SiO2 interface.