摘要
在考虑了多晶／单晶之间界面氧化层的基础上，本文提出了一个新的多晶硅发射区双极晶体管发射区渡越时间的解析模型，用推导出的标志电荷存储机理的Ｓ因子详细分析了发射区渡越时间与多晶／单晶界面参数之间的关系，区分了支配ＲＣＡ器件和ＨＦ器件发射区渡越时间的不同电荷存储机理，得到了有关获得高性能多晶硅发射区双极晶体管的结论．
Abstract Considering polysilicon/silicon interfacial oxide capacitance, a new analytical model of emitter transit time is proposed. Based on the derived S factors symbolizing charge storage mechanisms,dependence. of emitter transit time oh the interfacial parameters is studied. The charge storage mechanisms governing RCA and HF devices, respectively.) tare identified. Some conclusions for improving performances of polysilicon emitter bipolar transistors are obtained.
关键词
界面参数
发射区
渡越时间
多晶硅
单晶硅
硅
Interfaces (materials)
Mathematical models
Semiconducting silicon
Single crystals
Surface properties
