IGBT准数值模型和模拟

IGBT Quasinumerical Model and Simulation

本文采用数值计算与解析模型相结合的方法，建立了ＩＧＢＴ稳态特性的准数值模型。基于此模型与瞬态特性的电荷控制解析模型，我们开发了绝缘栅晶体管（ＩＧＢＴ）的稳态和瞬态准数值模拟软件包ＩＧＴＳＩＭ，可以模拟与ＩＧＢＴ的几何结构、掺杂分布、少于寿命相联系的直流和关断特性．本文介绍模拟所采用的物理模型、模拟技术和得到的结论，并给出部分模拟实例．

Abstract A quasinumerical stable state model of the IGBT is developed by combining the methods of numerical calculation and analytical solutions. Based on the stable and chargecontrol model in transient analysis, we develop a software package (IGTSIM) which can simulate the stable state and transient characteristics of thed IGBT relating with the geometry structure, doping distribution and minority carrier's lifetime, In this paper the physical model and simulation method are introduced t and simulation examples are also given.