摘要
利用低温红外光谱技术（８Ｋ），研究了微氮硅单晶中氧和氮杂质在高温１３００℃退火时的性质，实验指出，在此高温退火时，硅单晶中的原生氮－氧复合体被逐渐分解，氮杂质以很高的扩散速率。
Abstract The behaviour of nitrogen atoms in silicon annealed at 1300'C has been studied by means of infrared absorption spectroscope at low temperature (8K). The density of all optial lines related with oxygen atoms, nitrogen atoms and O-N complexes descends as increasing annealing time. The results show that the oxygen-nitrogens complexes in N-doped are dissolved slowly. Oxygen and nitrogen impurities out-diffuse rapidly during annealing.It is confirmed that nitrogen in silicon annealed at high temperature has a high diffusive coeffecient.
基金
国家自然科学基金
关键词
高温退火
硅
单晶硅
氧
氮
杂质
退火
Annealing
Impurities
Infrared spectroscopy
Nitrogen
Oxygen
Single crystals
