具有强耦合外腔的半导体激光器稳定性极限条件

Stability Limit Conditions of Semiconductor Lasers with a Strongly Coupled External Cavity

从理论上分析了强耦合外腔半导体激光器的稳定性。在外腔半导体激光器速率方程分析中引人了强反偏因子近似，通过增益速率－频率平面中的特性分析得到如下结论：对于给定参数的外腔半导体激光器，存在有一个技术不能超越的稳定性的理论极限条件。强反馈和短外腔长度有利于提高外腔半导体激器的稳定性．

The stability properties of semiconductor lasers strongly coupled to an externalcavity are theoretically analyzed.A strong feedback factor approximation is introduced tothe rate equations of external cavity semiconductor lasers.Through a gain-rate-frequencyellipe drawing,we get a result that there exists a theoretical limit condition on the stabilityof given semiconductor lasers with a strongly coupled external cavity. Technical methodscan not surpass this limit condition after the parameters of laser are given.We alsoconcluded that stronger feedback and shorter length of the external cavity are beneficial toimproving the stability of lasers.