摘要
文章介绍了一种利用Bipolar管的电流增益随温度呈指数型变化的规律,对带隙基准进行温度补偿的指数型温度补偿技术。该电路具有温度补偿精度高、电路结构简单且能输出高电位电压基准等优点。采用0．8μm BiCMOS的工艺模型,在电源电压为12V的情况下模拟分析,该电路在-45℃ -+85℃的温度范围内具有较好的温度漂移抑制。
In this paper, a bandgap Reference circuit with the exponential curvature temperature compensation technology has been introduced. This circuit has properties of simple structure, well temperature stability and high output voltage It has been simulated and analyzed by 0.8μm high-voltage BiCMOS technology. Then , it has a well temperature coefficient from -45℃ to ＋85℃.
出处
《电子与封装》
2006年第3期24-28,共5页
Electronics & Packaging
关键词
带隙基准
温度系数
指数型温度补偿
Bandgap Reference
Temperature Coefficient
Exponential Curvature Temperature Compensation
