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半导体激光照射对耐药细菌最低抑菌浓度的影响及分析 被引量:1

The Influence of Diode Laser Irradiation on the Minimal Inhibitory Concentration of Drug Resistant Bacteria
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摘要 目的:研究弱激光照射对耐药菌耐药性的影响,探讨弱激光体外照射治疗疾病的机理。方法:利用低功率半导体激光照射耐药菌,检测抗生素对其最低抑菌浓度(MIC)的变化。结果:经半导体激光照射后,抗生素对耐甲氧西林金黄色葡萄球的最低抑菌浓度有明显降低。结论:低能量半导体激光照射可使耐药菌耐药性下降,但可否降低至敏感或中敏尚需进一步实验设计与验证。 Objective: This study was conducted to investigate the effect of a diode laser on the drug resistance of some species of bacteria. Some experimental data may be provided in order to suggest the mechanism of laser irradiation in cure disease. Methods: Drug resistant bacteria were irradiated with a diode laser. Effect on that was obsérved by means of testing the MIC (minimal inhibitory concentration). Result: There were significant differences between different experimental groups. Conclusion: The drug resistance level of bacteria dropped after irradiation with low energy diode laser. But there need more experiments to confirm it.
出处 《中国医学物理学杂志》 CSCD 2006年第2期111-113,共3页 Chinese Journal of Medical Physics
关键词 激光照射 耐药 最低抑菌浓度 laser irradiation drug resistance MIC
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