摘要
用数学严格地证明了在引入了对数增益关系以及增益饱和因子后,描述半导体激光器系统的方程组仍有唯一的稳态解。以近年来研究较热的G aN多量子阱激光器为例对其进行了动态特性的数值模拟。计算结果表明载流子和光子数最终都将趋于稳定,这与理论证明的结果相一致。
In this paper, it is proved that there is the stable solution in rate equations after introducing the gain saturation factor and the logarithmic gain. At the same time, time--domain analysis is made by the direct numerical simulation to study the transient response characteristic of the GaN based Mutiquantum well lasers. The analysis results proved that the trend of lasers output would go towards stability finally. It is consistent with the results of the theorv proof.
出处
《光电子技术》
CAS
2006年第1期18-21,共4页
Optoelectronic Technology
基金
国家杰出青年科学基金资助项目(60125513)
关键词
增益饱和
速率方程
多量子阱
瞬态响应
gain saturation
rate equations
quantum, well
transient response