摘要
采用射频磁控溅射法在硅基底上制备了硅钼薄膜,并研究了不同基体对薄膜相结构、表面形貌及电学性能的影响。XRD,AFM和SEM分析结果表明,硅和石英玻璃基体上沉积的硅钼薄膜为非晶,而氧化铝基体上沉积的硅钼薄膜为多晶。四探针电阻测试结果表明,随着退火温度的升高,硅基体和氧化铝基体上的硅钼薄膜其方阻逐渐降低,而石英玻璃基体上的硅钼薄膜其方阻却异常增大。
Mo/Si thin films have been successful deposited on several substrates by using RF magnetron sputtering method and influence of these substrates on the phase structures, surface morphologies and electrical properties of the Mo/Si films have also been investigated. Results obtained from the analyses of X-ray diffraction （XRD）, atomic force microscope （AFM） and scanning electrical microscopy （SEM） show that the films deposited on Si and quartz glass substrate are amorphous, but those deposited on Al2O3 substrate are polycrystalline. Four-probe resistance meter was used to characterize their sheet resistance and the results reveal that annealing temperature affects their sheet resistance significantly. As the increase of annealing temperature, the sheet resistance of the films deposited on Si and Al2O3 substrate decreases while the one of the films deposited on quartz glass substrate increases abnormally.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2006年第3期408-411,共4页
Rare Metal Materials and Engineering
关键词
基体
磁控溅射
MoSi2薄膜
方阻
substrate
magnetron sputtering
MoSi2 thin films
sheet resistance
