Si(111)7×7表面Gd@C_(82)分子的STM研究

Scanning Tunneling Microscopy Study of Gd@C_(82) on Si(111) 7×7 Surface

用超高真空扫描隧道显微镜(UHV-STM)研究了金属富勒烯分子Gd@C82在Si(111)7×7重构表面的吸附特性和电学特性。STM形貌像显示Gd@C82分子和Si基底之间相互作用较强,Gd@C82分子吸附在Si基底的三种特定的位置上,其中在Si(111)7×7单胞内三个顶戴原子间的吸附位最稳定。扫描隧道谱(STS)的测量显示Gd@C82分子呈现半导体特性。分子表面局域电子态密度(LDOS)在Gd附近受到Gd与碳笼间电子转移的影响,发生显著变化。

Structures and electronic properties of the endohedral metallofullerence, Gd @ C82, adsorbed on Si（ 111 ） reconstructed surface was studied with ultrahigh vacuum scanning tunneling microscopy （UHV-STM）.STM images show that the adsorbed Gd@C82 molecules display semi-coeducting properties and above the three adatoms in the 7 × 7 unit cell is the preferential, stable adsorption site. Moreover, electron transfer between Gd and C82 cage strongly affects local desity of states （LDOS） of Gd@C82.