摘要
The NBTI degradation phenomenon and the role of hydrogen during NBT stress are presented in this paper. It is found that PBT stress can recover a fraction of Vth shift induced by NBT1. However, this recovery is unstable. The original degradation reappears soon after reapplication of the NBT stress condition. Hydrogen-related species play a key role during a device＇s NBT degradation. Experimental results show that the diffusion species are neutral, they repassivate Si dangling bond which is independent of the gate voltage polaxity. In addition to the diffusion towards gate oxide, hydrogen diffusion to Si-substrate must be taken into account for it also has important influence on device degradation during NBT stress.
The NBTI degradation phenomenon and the role of hydrogen during NBT stress are presented in this paper. It is found that PBT stress can recover a fraction of Vth shift induced by NBT1. However, this recovery is unstable. The original degradation reappears soon after reapplication of the NBT stress condition. Hydrogen-related species play a key role during a device＇s NBT degradation. Experimental results show that the diffusion species are neutral, they repassivate Si dangling bond which is independent of the gate voltage polaxity. In addition to the diffusion towards gate oxide, hydrogen diffusion to Si-substrate must be taken into account for it also has important influence on device degradation during NBT stress.
基金
Project supported by the National Natural Science Foundation of China （Grant No 60206006）, the Hi-Tech Research ＆ Development Program of China （Grant No 2004AA1Z1070） and the Key Project of Chinese Ministry of Education （Grant No 104172）.
