摘要
建立了氧化钒热敏薄膜微测辐射热计的PSPICE模型,结合一个具体的CMOS读出电路给出探测器的等效电路模型,分析了探测器的电学和噪声特性,根据等效模型基于微测辐射热计电阻RD和读出电路MOS沟道宽度W两个设计参数对噪声等效温差(NETD)进行了优化,优化数据表明,折中选取参数RD和W对探测器性能有重要的意义。
A PSPICE model for vanadium oxide microbolometer is presented. On the basis of this model combining with a CMOS readout circuit a equivalent circuit model of IR detector is established. The electricity and noise characteristics of the model were analysed. Finally NETD was optimized based on two important design parameters: microbolometer resistance RD and MOS channel width W. The optimized data show that it is meaningful for detector performance to select parameters properly.
出处
《红外技术》
CSCD
北大核心
2006年第3期134-138,共5页
Infrared Technology
基金
国防科学重点实验室基金资助项目