氧化钒热敏薄膜非致冷红外探测器的等效模型

Equivalent Model for Vanadium Oxide Thin Film Uncooled IR Detector

建立了氧化钒热敏薄膜微测辐射热计的PSPICE模型,结合一个具体的CMOS读出电路给出探测器的等效电路模型,分析了探测器的电学和噪声特性,根据等效模型基于微测辐射热计电阻RD和读出电路MOS沟道宽度W两个设计参数对噪声等效温差(NETD)进行了优化,优化数据表明,折中选取参数RD和W对探测器性能有重要的意义。

A PSPICE model for vanadium oxide microbolometer is presented. On the basis of this model combining with a CMOS readout circuit a equivalent circuit model of IR detector is established. The electricity and noise characteristics of the model were analysed. Finally NETD was optimized based on two important design parameters： microbolometer resistance RD and MOS channel width W. The optimized data show that it is meaningful for detector performance to select parameters properly.