摘要
研究了激光ＣＶＤ合成纳米硅（平均粒径为１４ｎｍ）的可见发光特性。用３００－４５０ｎｍ波长激发时，在４００－６５０ｎｍ区间观测到了发射宽峰。首次发现粒径大于１０ｎｍ的纳米硅在室温下具有可见发光，该现象可用量子限制／发光中心模型来作定性解释。
The photoluminescence of nanosized silicon synthesized by laser chemical vapor deposition has been studied.With the excitation light of 300 - 450nm, a wide photoluminescence was observed between the wavelength of 400 - 650nm. It is the first time that the nanosized silicon with the diameter larger than 10nm presents photoluminescence at room temprature. The quantum confinement/luminescence centers model can be used to interpret the experimental phenomena qualitatively.
出处
《应用激光》
CSCD
北大核心
1996年第5期193-195,220,共4页
Applied Laser
基金
广东省自然科学基金
广东省高教厅重点学科资助
关键词
纳米硅
光致发光
激光CVD
nanosized silicon, photoluminescence, laser chemical vapor deposition
