国外硅单晶质量研究进展

Research development on the quality of silicon crystal abroad

文章收集了１９８６年以来半导体物理国际会议发表的有关硅单晶质量的研究报告和成果。全文共分五大部分。内容包括氧、氢、碳、金属过渡元素等杂质的行为，硅中各种缺陷的产生及其性质，缺陷的消除及控制技术。

In this article,the research reports and results about the quality of silicon crystal which have been published at international conferences on the physics of semiconductors since 1986 are collected.It was divided into five chapters including the behaviour of various impurities in silicon such as:oxygen,carbon,hydrogen,transition-metal etc;the originality and characteistics of various defects in defects in silicon;the removal and control technologies of the defects.In the last chapter.The common and latest developed measurement methods of the defects are introduced.