Zn_（0．65）Cd_（0．35）Se－ZnSe量子阱自电光效应器件的制备和

Preparation of the ZnCdSe-ZnSe Self Electro-Optic Effect Device and Electro-Optic Modulation

利用ＭＯＣＶＤ技术和光电子器件工艺成功地制备了Ｐ－ｉ－ｎ结构的Ｐ－ＺｎＳｅ－（Ｚｎ０．６５Ｃｄ０．３５Ｓｅ－ＺｎＳｅＭＱＷ）－ｎ－ＺｎＳｅ自电光效应器件（ＳＥＥＤ）。在这种自由光效应器件中，在反向偏置电压下实现了由量子限制斯塔克效应（ＱｕａｎｔｕｍＣｏｎｆｉｎｅｄＳｔａｒｋＥｆｆｅｃｔ）引起的电光调制。

We have prepared successfully that the p-i-n structural p-ZnSe (Zn0.65Cd0.35Se-ZnSe MQW)-n-ZnSe SEED (SelfElectro-optic Effect Device) by using MOCVD(Metal Organic Chemical Vapor Deposition)technique and opticelectronic device technology. The electro-optic modulation owing to the quentum confined Stark effect has been carried out in this SEED device under the reverse bias voltages.