MOCVD生长的CdZnTe／ZnTe多量子附的激子光学特性

^Excition Optical Properties in CdZnTe / ZnTe Multiple Quantum Wells Grown by MOCVD

用常压ＭＯＣＶＤ方法在ＧａＡｓ（１００）衬底上生长了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱。在室温下，观测到了ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的三个谱带发光。根据ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱的吸收光谱和不同激发光强下的发光光谱，分别归结ＣｄＺｎＴｅ／ＺｎＴｅ多量子阱中观测到的三个发光谱带于覆盖层发光、ｎ＝１的重空穴激子发光及杂质发光。

Excition optical properties in CdZnTe/ ZnTe multiple quantum wells(MQWs) grown by mefalorganic chemical vapour deposifion (MOCVD) has been studied for the first fime. Three luminescence peaks in CdZnTe/ ZnTe MQWs are observed in photoluminescence spectrum at room temperature. The experimental results indicate that they are dueto the luminescences of cover. (n-1)heavy-hole excition and impurity in the CdZnTe / ZnTe MQWs, respectively.