注入水平对测试少子扩散长度影响的计算机模拟

Effect of Injection Level on Measured Minority Diffusion Length-A Computer Simulation

通过计算机数值求解半导体的基本方程，模拟了表面光伏（ＳＰＶ）法测量Ｎ型硅少子扩散长度时注入水平对测量值的影响。结果表明，当注入水平较高时，少子扩散长度的测量值变长。模拟结果与已公开发表的实验结果一致。

By using computer to solve numerically the basic equations of semiconductor, the effect of injection level on the measured minority carrier diffusion length is simulated. It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.The simulated result is in agreement with the published experimental result.