摘要
利用扫描俄歇微探针对多晶硅／二氧化硅界面进行分析，发现多晶硅／二氧化硅界面不是突变的，而存在着一个过渡区。根据多晶硅薄膜的成核理论，分析了该过渡区产生的原因，并利用＂幸运载流子＂模型，定量分析该过渡区对ＭＯＳ结构热载流子注入效应的影响。
In this paper,the Scanning Auger Microprobe has been used to investigate the poly-Si/SiO2 interface.It has been found that the poly-Si/SiO2 interface has d transition region instead of changing abruptly.The reasons of forming this region have been studied according to the nucleation theory of polysilicon film.Using 'Lucky Carriers' model,the influence of the transition region on the hot carriers injection effect of MOS structure has been analyzed quantitatively.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1996年第3期225-232,共8页
Research & Progress of SSE
关键词
俄歇电子能谱
超大规模IC
多晶硅
二氧化硅界面
Auger Electron Spectroscopy
Transition Region
Lucky Carriers Hot Carriers
Induction Period
Poly-Si/SiO_2 Interface
