短沟道CMOS／SIMOX器件及电路的辐照特性研究

The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices

利用薄膜全耗尽ＣＭＯＳ／ＳＯＩ工艺成功地研制了沟道长度为１．０μｍ的薄膜抗辐照ＳＩＭＯＸＭＯＳＦＥＴ、ＣＭＯＳ／ＳＩＭＯＸ反相器和环振电路，Ｎ和ＰＭＯＳＦＥＴ在辐照剂量分别为３ｘ１０５ｒａｄ（Ｓｉ）和７ｘ１０５ｒａｄ（Ｓｉ）时的阈值电压漂移均小于１Ｖ，１９级ＣＭＯＳ／ＳＩＭＯＸ环振经过５ｘ１０５ｒａｄ（Ｓｉ）剂量的电离辐照后仍能正常工作，其门延迟时间由辐照前的２３７ｐｓ变为３２８ｐｓ。

This paper discusses the total dose radiation characteristics of 1.0μm SIMOX MOSFETs,CMOS/SIMOX inverters and ring oscillators.The thin film SIMOX MOSFETs have a good radiation characteristics.The radiation induced threshold voltage shifts are less than 1.0V when the irradiation dose is 3x105rad(Si) and 7x105rad(Si) for N-and P-MOSFET,respectively.The ring oscillator can operate well after irradiation of 5x105rad(Si) γ ray.Its propagation delay increases from 237ps to 328ps.The radiation tolerance of PMOSFET is better than that of NMOSFET.The radiation induced leakage of NMOSFET is mainly caused by the parasitic backchannel transistor.