摘要
本文在表面基模型基础上，借用半导体物理中复合／产生概念，提出表面基／复合中心模型，并研究了含两种类型表面基的Ｓｉ３Ｎ４绝缘体及其两种表面基（硅醇基和胺基）的比率对Ｓｉ３Ｎ４栅ｐＨ－ＩＳＦＥＴ敏感性能和稳定性的影响，其结果与实验结果相符。对改善ｐＨ－ＩＳＦＥＴ传感器的敏感特性具有实际指导意义。
Based on the site-binding model,being the recombination/generation concept of semiconductor physics for reference,a surface-site/recombination center model for the process of H+-ion dissociation-association in electrolyte-insulator(E-I) interface is presented.The effect of the Si3N4 insulator which contains two types of surface-sites and the ratio of silanol site to amine site on sensitive characteristic and stability of Si3N4-gate pH-ISFET is also discussed,and the results correspond with experimental results.It is useful in improving sensitive characteristic of pHISFET sensors.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第11期38-42,共5页
Acta Electronica Sinica
关键词
表面基模型
复合中心理论
半导体物理
传感器
Site-binding model,Si_3N_4 insulator,Recombination center theory,Ratio of silanol site to amine site,pH versus
