第三代电子材料——氮化镓

GaN:One of the Third Generation of Electronic Materials

简要介绍了第三代电子材料纤锌矿氮化镓的化学特性、结构特性、光学特性和电学特性。讨论了材料生长技术和制约氮化镓研究的衬底材料问题。最后给出了氮化镓材料在蓝光发射器件高温、大功率和微波用 MESFET 以及HFET 方面的应用情况并展望了未来前景。

This Paper briefly introduces the properties of the third generation of electronic material,wurtzite GaN,including chemical property,structural property,Optical property,and electrical property.Then it disscusses the mate- rial growth techniques and substrate materials hindering GaN development. Finally it presents the potential applications of GaN material in blue emitters and electronic devices such as MESFET and HFET for high temperature,high power and microwave applications,and gives the future prospect.