摘要
讨论了外延片的外延层电阻率、衬底电阻率、探针接触电阻、外延层纵向电阻与夹层电压之间的关系,推导了一种全新的二探针法测量外延片夹层电压的数学公式。
Correlations of voltages of the sandwiched layer in epitaxial wafers with epi layer resistivity,substrate resistivity,probe contact resistance and epi layer vertical resistance are discussed.Mathematical expressions are derived for measurements of the sandwiched layer voltage in epi wafers by a new two probe method,thus providing a theoretical basis for the calculation of the sandwiched layer voltage.
出处
《微电子学》
CAS
CSCD
1996年第5期301-304,共4页
Microelectronics
关键词
半导体材料
外延片
数学模型
硅片表征
Semiconductor material,Epitaxial wafer,Mathematical model,wafer characterization