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铟量子点实现单电子晶体管方法 被引量：1

A novel SET process with Indium quantum islands
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摘要 研究了一种新型的铟量子点单电子晶体管,它是利用电子束直写系统的高分辨率和分子束外延设备的高度可控生长方法得到的.实现了在纳米电极间隙上生长铟量子点.该结构由量子点充当单电子晶体管的库仑岛,构成了多岛结构的单电子晶体管. A new Single-electron Transistor with Indium Quantum Dots is presented. By virtue of the high resolution of the EBL and the accurately controllable growth of the MBE,Indium Ouantum Dots are ~own in the nanometer gap of the electrodes. With these Indium quantum dots as coulomb islands, a kind of SET with multi-islands is prepared, and the coulomb blockade effect is observed successfully.
作者 郭荣辉 赵正平 郝跃 刘玉贵 武一斌 吕苗
机构地区 西安电子科技大学微电子研究所 河北半导体研究所
出处 《西安电子科技大学学报》 EI CAS CSCD 北大核心 2006年第2期186-189,共4页 Journal of Xidian University
基金 国家部委科技重点基金支持项目(51432030101DZ2302)
关键词 单电子晶体管 库仑阻塞 量子点 single-electron transistors Coulomb blockade quantum dots
分类号 TN303 [电子电信—物理电子学]
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共引文献10

同被引文献20

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引证文献1

西安电子科技大学学报
2006年 第2期

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