An／C_（60）－Polymer／P－Si结构C－V特性

C-V Characteristic of the An/C_60-Polymer/P-Si Structure

报道了利用ＰＥＣＶＤ技术在Ｐ－Ｓｉ衬底抛光面上淀积含Ｃ６０聚合物薄膜及在薄膜表面蒸金形成Ａｎ／Ｃ６０－Ｐｏｌｙｍｅｒ／Ｐ－Ｓｉ结构．通过常温及温偏处理后的不同Ｃ－Ｖ特性，推算了聚合物薄膜中的几种电荷密度和介电常数，并对经过温偏处理后Ｃ－Ｖ曲线的畸变做了讨论．

The polymeric thin films containing fullerene C60 onto p-type silicon were fabricated using plasma enhanced chemical vapor deposition technique. The An/C60-Polymer/P-Si structures were formed by evaporating gold onto the surface of the polymer films. The polymer films worked as the gate insulator. After biased temperature treatment. a variety of C-V characteristics were obtained.Several sorts of charge densities and dielectric constant for the polymeric thin film containing C60 were established, the abnormal curve of the C-V characteristic was discussed during biased temperature treatment.