摘要
基于带隙基准的原理,采用0.6μm、N阱CMOS工艺,文章设计了一种工作在亚阈值区的用于锂离子和锂聚合物电池充电保护芯片的低功耗基准电路。Hspice仿真结果表明:基准电压为1.068V,电源电压由1.8V到8V变化,电路最大消耗电流小于0.15μA;温度由-40℃到80℃变化,其温度系数约为±10ppm/℃。整个充电保护芯片测试结果,其功耗小于0.6μW。
Based on the principle of the bandgap reference, this paper designs a referenced circuit with low-power consumption working on the subthreshold region, which is used in a Li-lon and Li-polymer battery charge protection monolithic. With 0.6μm, N well CMOS technology, Hspice simulation shows that this circuit can operate with temperature coefficient ±10ppm/℃ (ambient temperature -40℃~80℃ ), the maximum consumptive current less than 0.15μA(power 1.8V^8V), when the referenced voltage is 1.068V. The whole charge protection IC's silicon result shows that the power consumption is less than 0.6μW.
出处
《微电子学与计算机》
CSCD
北大核心
2006年第4期80-82,共3页
Microelectronics & Computer
基金
国家自然科学基金项目(60572076)
江苏省高校自然科学研究计划(05JKB510113)
苏州大学大学生课外学术科研基金项目
关键词
亚阚值区
CMOS工艺
低功耗
带隙基准
温度系数
Subthreshold region, CMOS technology, Low-power consumption, Bandgap reference, Temperature coefficient