新颖的氧化生长绝缘层的MISiC传感器特性研究

Analysis on Characteristics of Schottky Sensor with a Novel Grown Gate Insulator

采用新颖的NO和O2+CHCCl3(TCE)氧化技术制备金属-绝缘-体SiC(MISiC)肖特基势垒二极管(SBD)气体传感器的栅绝缘层,研究了传感器的响应特性。结果表明,传感器可快速的检测低浓度的氢气,NO氮化氧化改善了绝缘层的界面,TCE工艺降低了界面态密度和氧化层的有效电荷密度,并同时提取重金属以提高传感器的性能,使其可在高温(如300℃)等恶劣环境下长期可靠的工作,研究还发现:适当增加绝缘层厚度有助于传感器灵敏度和可靠性的改进。

A novel metal-insulator-n-type 6H-silicon carbide （MISiC） Schottky-barrier-diode （SBD） gas sensor with NO and O2 ＋CHCCl3 （TCE）grown insulator has been fabricated and studied. The results show that the sensor can respond to low hydrogen concentration quickly. NO-grown technique can improve the interface properties between the gate insulator and substrate, TCE-grown technique can lower the interface states density and effective oxide charge, also it can distill the heavy metal elements to improve the sensor performance. Thus, it is suitable for long time working under harsh environments, e. g. , an operating temperature of 300 ℃. And Increasing the insulator thickness properly helps to improve the sensitivity and reliability of the sensor.