GaAs晶体二维自旋磁极化子平均数的磁温效应

Magnetic Field and Temperature Effect on the Average of 2-D Spin Magnetopolaron in GaAs Crystal

研究了半导体内弱耦合二维自旋磁极化子的磁场和温度特性.在有限温度和外加均匀恒定磁场的情况下,应用么正变换和线性组合算符法给出了GaAs晶体内极化子平均数与磁场和温度的依赖关系的理论表示,也作了数值分析.数值计算的结果表明:在某一确定的温度下,弱耦合二维自旋磁极化子平均数随磁场的加强而减小;磁场较弱或温度较高时,平均数变化较剧烈;磁场较强或温度较低时,平均数变化较平缓;当外加磁场确定时,弱耦合二维自旋磁极化子平均数随温度升高而增大;当温度较低或磁场较强时,平均数变化偏离线性关系;当温度较高或磁场较弱时,其变化接近线性关系.

This paper studies the magnetic field and temperature characteristics of weak coupling 2-D spin magnetopolaron in semiconductor. Under the circumstances of finite temperature and even stationary magnetic field, using unitary transformations and the linear combination operator method yields the theoretical expression about dependency relationship of the average of polaron in GaAs crystal to magnetic field and temperature. Numerical calculation illustrates that： the average of weak coupling 2-D spin magnetopolaron decreases with the increasing magnetic field in a determinate temperature; the average changes greatly when magnetic field is weak or temperature is high; the average changes slowly when magnetic field is strong or temperature is low; the average of weak coupling 2-D spin magnetopolaron increases with the increasing temperature in a determinate magnetic field ; the change of the average departs from linear relationship when temperature is low or magnetic field is strong; the change of the average is near to linear relationship when temperature is high or magnetic field is weak.