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阶梯变掺杂漂移区高压SOI RESURF结构耐压机理研究 被引量：2

Research on Breakdown Mechanism of High Voltage SOI RESURF Structure with Step Doping Drift Region
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摘要 研究了阶梯变掺杂漂移区高压SOI RESURF(Reduce SURface Field)结构的器件几何形状和物理参数对器件耐压的影响;发现并解释了该结构纵向击穿时,耐压与浓度关系中特有的“多RESURF平台”现象。研究表明,阶梯变掺杂漂移区结构能明显改善表面电场分布,提高耐压,降低导通电阻,增大工艺容差;利用少数分区,能得到接近线性变掺杂的耐压,降低了工艺难度。 The breakdown mechanism of high voltage step doping drift region SOl RESURF structure is studied. The relationship between the breakdown voltage and the main parameters are analyzed in detail using MEDICI. The multiple RESURF plateaus in the relationship between breakdown voltage and concentration is discovered and ex- plained. The results show that the step doping drift region structure achieves a higher breakdown voltage, lower specific on-resistance and larger process tolerance. It is proved that using a few divided drift regions to approach the breakdown voltage of linear doping drift region through an easier technology is feasible.
作者 毛平 陈培毅
机构地区 清华大学微电子学研究所
出处 《微电子学》 CAS CSCD 北大核心 2006年第2期125-128,共4页 Microelectronics
基金 国家自然科学基金资助项目(10075029)
关键词 SOI RESURF结构 阶梯变掺杂 耐压机理 SOI RESURF structure Step doping drift region Breakdown mechanism
分类号 TN403 [电子电信—微电子学与固体电子学]
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参考文献10

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共引文献7

同被引文献20

  • 1刘磊,高珊,陈军宁,柯导明,刘琦,周蚌艳.高压LDMOS场极板的分析与设计[J].半导体技术,2006,31(10):782-786. 被引量：4
  • 2陈利,李开航,郭东辉.一种适用于高低压电路单片集成的LDMOS器件[J].微电子学,2006,36(6):837-841. 被引量：3
  • 3李琦,张波,李肇基.带p埋层表面注入硅基LDMOS模型与优化[J].Journal of Semiconductors,2007,28(8):1267-1271. 被引量：4
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微电子学
2006年 第2期

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