多晶硅薄膜高温退火特性研究分析

An Experimental Study on High-Temperature Annealing Behavior of Polysilicon Films

利用原子力显微镜、二次离子质谱分析仪和探针,对多晶硅薄膜的高温退火特性进行了实验研究。研究结果表明,多晶硅薄膜退火时出现的第二次反退火阶段,其物理起因是由于注入杂质在薄膜中的再分布;而在更高退火温度下,多晶硅薄膜会出现晶粒再结晶和再结晶弛豫过程,这些过程都会影响多晶硅薄膜的薄层电阻。

An experiment was conducted to study the high-temperature annealing characteristics of polysilicon films using atomic force microscope, secondary ion mass spectroscopy and probe, It has been shown that the second inverse annealing during polysilicon film annealing is physically induced by redistribution of implanted impurities in the film; and at higher annealing temperatures, grain recrystallization and recrystallization relaxing would take place in polysilicon films, which will have some effects on the sheet resistance.