摘要
实验研究一种新颖的光刻胶牺牲层的接触平坦化（contact planarization）技术，应用于MEMS结构制作。实验研究了温度与光刻胶流动性的关系，以及牺牲层厚度、施加压力和温度、MEMS结构密度等因素对平坦化效果的影响，在优化条件下，牺牲层的起伏台阶从2μm减小到20～40nm。与化学机械抛光技术相比，接触平坦化无明显凹陷（Dishing）效应，无衬底损伤，同时呈现出良好的局部和总体均匀性。
A novel contact planarization （CP） technology was utilized to planarize sacrificial photoresist for MEMS application. The relationship between temperature and photoresist＇s viscosity was investigated and influences of sacrificial layer thickness, applied pressure, temperature and feature density to planarization were discussed. Under the optimal condition, the step heights decrease from 2urn to 20 -40nm. Compared with chemical mechanical polishing （CMP）, CP result shows good local and global uniformity and no obvious dishing effect and scratches exist.
出处
《功能材料与器件学报》
EI
CAS
CSCD
北大核心
2006年第2期135-138,154,共5页
Journal of Functional Materials and Devices
基金
由上海微系统与信息技术研究所与韩国三星综合技术院的课题"CMOS-CompatibleMEMSProcess(Post-CMOS)"资助
