Si^+和S^+注入SI-GaAs白光快速退火特性

THE CHARACTERISTICS OF RAPID THERMAL ANNEALING OF Si^+ AND S^+ IMPLANTED GaAs

研究了 Si^+和 S^+注入 SI-GaAs 经白光瞬态退火后的电特性,得出最佳的退火条件为930～960℃,5s.在适当的注入和退火条件下,得到了陡峭的载流子剖面分布没有拖长的尾巴.发现Si^+注入白光快速退火样品比常规热退火样品有较好的电特性.使用 Si^+注入白光快速退火制作出了性能良好的全离子注入平面型 MESFET.

The electrical characteristics of ^(29)Si^+ and ^(34)S^+ implanted GaAs are measured after light rapid thermal annealing(RTA)for durations of 2～10s at temperatures between 800～1000℃.Optimal conditions are 5s at 960℃ in N_2 atmosphere The carrier concentration profiles of ^(34)S^+ and ^(29)Si^+ implanted samples are abrupt for optimal annealing conditions.The RTA is more aeva- ntageous than convertional furnace annealing.High guality MESFET of full ion implantetion are fabricated.