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磁性电子元器件精加工用抛光剂性能研究

Investigation of characteristics of polishing solution used for finish Machining of Magnetic Electron Parts
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摘要 研制出了适合于磁性电子元器件表面平坦化加工用的抛光剂,该抛光剂磨料选用超细α-Al2O3微粉。通过对磨料化学纯度的处理、表面包裹处理、抗静电处理、分散剂等方面研究试验,对抛光剂悬浮性、酸碱性、润滑性、可擦性等方面进行检测,结果表明:该抛光剂具有高浓度、低粘度和高分散稳定性,抛光效率高,具有良好的抗静电性和可擦性。抛光荆pH=6—8。抛光效率≥1.2μm/s,工件表面粗糙度Ra≤0.04μm。 In this paper, the experimental results of polishing solution used for finish machining of magnetic electron parts of apparatus was reported. The polishing solution contains super-thin α-Al2O3 powder. By investigating the treating of chemistry purity and surface wrap of the power, electrostatic antistatic treating and dispersant as well as the measure of the character about suspension, acidity and alkalescence, lubricative action and wiping, it was found that this polishing solution has high concentration, low adherence, high separating stability, high polishing efficiency, and its antielectrostatic character and wiping character were very good. The pH value of this polishing solution was 6 ~ 8, polishing efficiency was greater than 1.2 μm/s, and the roughness of the polished workpiece was less than 0.04 μm.
作者 方向前
出处 《金刚石与磨料磨具工程》 CAS 北大核心 2006年第2期58-60,共3页 Diamond & Abrasives Engineering
关键词 磁性电子元器件 超细α-Al2O3微粉 抛光剂 精加工 magnetic electron parts super-thin α-Al2O3 powder polishing solution finish machining
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  • 1张朝辉,雒建斌,温诗铸.化学机械抛光流动性能分析[J].润滑与密封,2004,29(4):31-33. 被引量:12
  • 2电子工业生产技术手册编委会.电子工业生产技术手册(6)[M].北京:国防工业出版社,1989.173.
  • 3O'mara W C. Planarization' by CMP: Forecasting the Future [J]. Semiconductor International,1994,17(8): 140-144.
  • 4Pietsch G J et al. The atomic-scale removal mechanism during chemo-mechanical polishing of Si(100) and Si(111)[J].Surface Science, 1995; 395:331-333.
  • 5Kappila Wijekoon. IEEE/SEMI Advanced Semiconductor Manufacturing Conference[C]. 1998,354.
  • 6Renteln P, Coniff J. The evolution of chem-mechanical planarization: from aberrant to prosaic. Mat Res Soc. Symp Proc, 1994; 337:105-111.
  • 7Rahul Jaieath, Mukesh Desai, Matt Stell, et al. Comsumbales for the chemical mechanical polishing of dielectrics and conductors [J]. Mat Res Soc Symp Proc, 1994, 337:121-133.
  • 8刘风伟.硅片抛光[J].半导体技术,1998,(2):47-49.
  • 9Hooper B J, Byrne G, Galligan S. Pad conditioning in chemical mechanical polishing[J]. J. Materials Processing Technology, 2002,123:107-113.
  • 10Lei H, Luo J B, Pan G S, et al, Chemical Mechanical Polishing of Computer Hard Disk Substrate in Colloidal SiO2 Slurry[J]. International Journal of Nonlinear Science and Numerical Simulation, 2002,3(3-4):455-459.

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