摘要
采用高温热解法在860℃分别制备出了镓、氮以及硼和氮掺杂的碳纳米管,提纯后利用丝网印刷工艺分别将它们制备成薄膜,并测试了它们的拉曼光谱与场发射性能。测试结果表明,掺杂纳米管的缺陷密集度比纯碳纳米管明显增大,而它们的场致电子发射性能则与掺杂元素的性质密切相关。镓和氮掺杂的纳米管均具有非常优异的场发射性能,而硼和氮共掺杂的纳米管的场发射性能很差。掺杂引起碳纳米管费米能级附近能态密度的变化及功函数的降低是其具有优异场致电子发射性能的主要原因。
Pristine, nitrogen （N） - , nitrogen and boron （N ＋ B） - , and gallium （Ca） - doped carbon nanotubes were synthesized by pyrolysis at 860℃ and purified. Thin films of the purified samples were fabricated by a screen - printing method. Raman spectroscopic and field emission properties of these films were studied, It is found that doping increases the density of defects of the nanotubes while the field electron emission property depends on the types of doped elements. N- and Ga - doped nanotubes have unique field electron emission properties but N and B co - doped samples are very poor emitters. The changes in the density of states near the Fermi level and in the work function are responsible for the differences in field emission properties of these films.
出处
《光散射学报》
2006年第1期16-20,15,共6页
The Journal of Light Scattering
基金
FundsforUniversityTalentsofHenanProvince(No.1999-125)
FundsforNewlyIntroducedTalentsofDonghauUni-versity(No.2351038)
关键词
碳纳米管
掺杂
拉曼光谱
场发射
Carbon nanotubes
Doping
Raman spectroscopy
Field emission
