期刊文献+

单晶碳和锗薄膜热导率的分子动力学模拟 被引量:2

Molecular dynamic simulation thermal conductivity of single/crystal carbon and germanium thin films
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摘要 采用非平衡分子动力学(NEMD)方法分别模拟碳和锗纳米薄膜的法向热导率.模拟结果表明:厚度为2~5nm的碳晶体薄膜在温度为300~500K的法向热导率显著小于对应的大体积晶体的实验值,并随薄膜厚度的增加而增加,法向热导率与薄膜厚度呈近似线性关系;厚度为2.8175~11.27nm的单晶锗纳米薄膜在温度为300~500K时的法向热导也存在明显的尺寸效应,薄膜的热导率与其厚度呈近似线性关系,并且随着薄膜厚度的增加而增加. NEMD calculations are employed for the thermal conductivity of single crystal carbon and germanium films in normal direction. The results of calculations demonstrate that, at the temperature ranging from 300 to 500 K, the thermal conductivity in normal direction of the crystal carbon films with the thickness of about 2~5 nm is remarkably lower than the corresponding experimental data of the bulk, and rises with the increase of the film thickness in a approximate linear trend; as for the germanium film with the thickness of about 2.8175~11.27 nm, in the temperature range of 300~500 K, the size effect on the thermal conductivity remains notable and the thermal conductivity also rises with the increase of the film thickness in a approximate linear trend; the thermal conductivity of the crystal carbon and germanium films decreases with the increase of the temperature.
出处 《哈尔滨工业大学学报》 EI CAS CSCD 北大核心 2006年第4期517-519,共3页 Journal of Harbin Institute of Technology
关键词 分子动力学 热导率 纳米薄膜 尺寸效应 molecular dynamics thermal conductivity nanoscale thin film size effect
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参考文献5

  • 1TIENCL C G.Challenges in Microsocale Conductivean and Radiative Heat Transfer[ J ].ASMET Journal of Heat Transfer,1994,116:799-807.
  • 2ABRAMSON A R,TIEN C L.Recent developments in microscale thermophysical engineering[ J ].Microscale Thermophysical Engineering,1999,3:229-244.
  • 3TERSOFF J.New empirical approach for the structure and energy of covalent system[J].Phy Rev B,1988,37:6991-7000.
  • 4TERSOFF J.Empirical interatomic,empirical interatomic pontential for carbon,with applications to amorphous carbon[J].Phy Rev B,1988,38:9902 -9905.
  • 5Frenkel,Smit.Understanding molecular simulation:From algorithms to applications[ M ].Holland:Academic Press,1996.

同被引文献13

  • 1王亚辉,刘林华,孔宪仁.金刚石薄膜热导率的分子动力学模拟[J].哈尔滨工业大学学报,2006,38(5):708-711. 被引量:3
  • 2CHEN Yunfei, LI D, YANG J. Molecular dynamics simulation of Ar/Kr superlattice nanowires [ J ]. Physi- cal Review B, 2004, 349(1/2/3/4): 270-280.
  • 3SAMVEDI V, TOMAR V. The role of interface thermal boundary resistance in the overall thermal conductivity of Si/Ge multilayered structures [ J ]. Nanotechnology. 2009, 20(36) : 365701.
  • 4ASHTON S, PATRICK K. Thermal resistivity of Si-Ge alloys by molecular dynamic simulation [ J ]. Journal of Applied Physics, 2008, 103 ( 11 ) : 1 - 6.
  • 5CHEN Yunfei, DEYU L, JENNIFER R. Minimum su- perlattice thermal conductivity from molecular dynamics [J]. Physical Review B, 2005, 72(174302) :1 -6.
  • 6DEYU L, YIYING W, ARUN M. Thermal conductivity of Si/SiGe superlattice nanowires [ J ]. Applied Physics Letters, 2003, 15(83) : 3186 -3188.
  • 7SCHELLING P K, PHILLPOT S R, KEBLINSKI P. Comparison of atomic-level simulation methods for com- puting thermal conductivity [J]. Physical Review B, 2002, 65 (14) : 144306.
  • 8STILLINGER F, WEBER T. Computer simulation of lo- cal order in condensed phases of silicon [ J ]. Physical Review B, 1985, 31(8) : 5262 -5271.
  • 9SRINIVASAN S, MILLER R S. On parallel nonequilib- rium molecular dynamics simulations of heat conduction in heterogeneous materials with three-body potentials: Si/Ge superlattice [ J ]. Numerical Heat Transfer B, 2007, 52(4): 297-321.
  • 10弗兰克.分子模拟——从算法到应用[M].汪文川,译.北京:化学工业出版社,2002:351-354.

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