Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

Pt/Ti 底部电极被 magnetrondual-facing-target 劈啪作响系统在 SiO_2/Si 底层上制作。铅锆酸盐泰坦吃了(PZT ) 薄电影是由无线电的扔的 onPt/Ti/ SiO_2/Si 底层频率(RF ) 磁控管劈啪作响系统。为 5 h 被扔的 PZTthin 电影的厚度是大约 800 nm。PZT 薄电影在 700 deg C 为 20 min 在 Ar 环境和 rapid-thermal-annealed 扔了的 XRD 系列表演有好结晶化行为和 perovskite 结构。雏晶的吝啬的直径是 70 nm 和表面的 AFM 显微图表演 PZT 薄电影组织一致、稠密。未加工的平均数，根平均数平方粗糙和 PZT 薄电影的吝啬的粗糙是 34.357 nm， 2.479 nm 并且 1.954 nmrespectively。因为测试频率是 1 kHz， PZT 薄电影经常的电介质是 327.6。Electrichysteresis 循环显示出那强制的地力量，剩余极化力量和 PZT 薄电影的自发的极化力量分别地是 50 kV/cm， 10 muC/cm^2 和 13 muC/cm^2。

Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency （RF） magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34..357 rim, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.5. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10μC/cm^2 and 13μC/cm^2 respectively.