亚50nm自对准双栅场效应晶体管的量子和短沟道效应的研究

STUDY ON QUANTUM AND SHORT-CHANNEL EFFECTS FOR SUB-50nm FINFETS

采用有限元法自洽求解泊松-薛定谔方程,数值模拟了一种新型的亚50nm N沟道双栅MOS场效应晶体管的电学特性,系统阐述了尺寸参数对短沟道效应的影响规律.比较了不同尺寸参数下的亚阈值摆幅、阈值电压下跌和D IBL效应以及沟道跨道,获得了最佳硅鳍宽度(Tfin)和栅极长度(Lg)参数.模拟结果与实验数据的经典数值模拟进行了比较,表明由于电子束缚效应对器件性能的影响,考虑量子效应对F inFET器件的性能优化尤其重要.

A new kind of sub-50 nm N channel double gate MOS nanotransistors was simulated by solving coupling Poisson- Schrodinger equations in a self-consistent way with a finite element method, and a systematic simulation-based study was presented on the short-channel effects. Subthreshold swing, threshold-vohage roll-off, and drain-induced barrier lowering as well as the transconductance were investigated in terms of different dimensional parameters. The optimal Si-fin thickness （ Tfin） and the gate length （ Lg） were obtained. The simulation results were compared with the experimental results in order to verify the validity of the proposed quantum mechanical approach. In order to understand the influence of electron confinement, the result of quantum mechanical simulation were also compared with that of the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.