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PIN结构发光二极管反向击穿特性分析 被引量：3

Analysis on PIN Type LED′s Reverse Breakdown Characteristics
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摘要 通过利用突变结PIN理想结构电场分布模型,分析了该结构发光二极管(LED)反向击穿电压与非故意掺杂有源区厚度的线性相关性。通过利用LP-MOCVD技术生长了不同厚度多量子阱(MQW)有源区AlGaInP LED,测量了器件的反向击穿特征,测试结果与理论分析非常吻合。同时获得了AlGaInPMQW结构的临界反向击穿电场强度数值。这些结果可以作为具有PIN结构的LED性能优化的重要参考。 The linear relation between the reverse breakdown voltage and un-doping active region＇s thickness of PIN light emitting diode（LED） was analyzed by using the ideal PIN structure＇s electric field distribution model. LEDs with varied un-doping multi-quantum wells （MQWs） active region thickness were grown with LP-MOCVD,and the breakdown voltage was confirmed to be linear with the thickness of the un-doping active region. At the same time,the critical breakdown electric intensity of AIGalnP MQW structure was obtained. The results were very useful during the optimizing process for the PIN LED＇s structure.
作者 李树强 夏伟 马德营 张新 徐现刚 蒋民华
机构地区 山东大学 山东华光光电子有限公司
出处 《光电子．激光》 EI CAS CSCD 北大核心 2006年第4期506-508,共3页 Journal of Optoelectronics·Laser
关键词 发光二极管(LED) 反向击穿电压 多量子阱(MQW) PIN结构 light emitting diode（LED） breakdown voltage multi-quantum welI（MQW） PIN structure
分类号 TN312.8 [电子电信—物理电子学]
  • 相关文献

参考文献12

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共引文献20

同被引文献24

  • 1邓军,李建军,廉鹏,韩军,渠红伟,董立闽,郭霞,沈光地.MOCVD原位监测垂直腔面发射激光器材料生长[J].光电子．激光,2004,15(7):827-830. 被引量：5
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  • 3牛南辉,王怀兵,刘建平,刘乃鑫,邢燕辉,韩军,邓军,沈光地.生长停顿改善MOCVD生长InGaN/GaN多量子阱的特性[J].光电子．激光,2007,18(4):422-424. 被引量：1
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引证文献3

二级引证文献12

光电子．激光
2006年 第4期

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