摘要
本文对半导体激充器在高速调制中所出现的 Pattern 效应现象进行了较为详细的理论分析和实验研究.得出了提高偏流可抑制 Pattern 效应的结论.
This paper deals with analytical and experimental work related to Pattern Effect in a semiconductor laser at high rate modulation in details.The conclusion that Pattern Effect can be restrained by increase of the bias current is obtained.