期刊文献+

两个介电函数模型的用法(英文)

The Usage of Two Dielectric Function Models
下载PDF
导出
摘要 回顾了两个著名的广泛用于提取或参数化半导体和电介质材料光学常数的介电函数模型,即ForouhiBloomer和TaucLorentz模型的历史、各种改进、各自特点和应用.在揭示它们内在特点和比较运用在具体实例的基础上,拓展和预言了这两个模型更为深入的和更为广泛的应用. This paper presents an overview of the history, modifications, characteristics, and applications of two well known dielectric function models ——the Forouhi-Bloomer model and the Tauc-Lorentz model——which have been widely used for the extraction and parameterization of optical constants in semiconductors and dielectrics. Based on analysis of their inherent characteristics and comparison via demonstrative examples, deeper and wider usage of the two models is predicted.
作者 陈红 沈文忠
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第4期583-590,共8页 半导体学报(英文版)
基金 国家自然科学基金(批准号:10125416) 上海市重大基础研究计划(批准号:03DJ14003,05DJ14003)资助项目~~
关键词 介电函数模型 光学常数 半导体 dielectric function models optical constants semiconductors
  • 相关文献

参考文献30

  • 1Swanepoel R. Determination of the thickness and optical constants of amorphous silicon.J Phys E, 1988,16:1214.
  • 2Aspnes D E,Theeten J B, Hottier F. Investigation of effective.medium models of microscopic surface roughness by spectroscopic ellipsometry. Phys Rev B, 1979,20 : 3292.
  • 3Forouhi A R, Bloomer I, Optical dispersion relations for amorphous semiconductors and amorphous dielectrics, Phys Rev B,1986,34:7018.
  • 4JeUison G E Jr,Modine F A. Parameterization of the optical functions of amorphous materials in the interband region.Appl Phys Lett, 1996,69:371.
  • 5Adachi S. Model dielectric function of hexagonal CdSe.J Appl Phys,1990,68:1192.
  • 6Djurisic A B,Chan Y,Li E H. Progress in the room-temperature optical functions of semiconductors. Mat Sci Eng R,2002,38 : 237.
  • 7沈伟东,刘旭,朱勇,邹桐,叶辉,顾培夫.用透过率测试曲线确定半导体薄膜的光学常数和厚度[J].Journal of Semiconductors,2005,26(2):335-340. 被引量:13
  • 8Kildemo M, Ossikovski R, Stchakovsky M. Measurement of the absorption edge of thick transparent substrates using the incoherent reflection model and spectroscopic UV-visiblenear IR ellipsometry. Thin Solid Films, 1998,313/314 : 108.
  • 9Hayashi Y, Yu G, Rahman M M,et al. Determination of optical properties of nitrogen-doped hydrogenated amorphous carbon films by spectroscopic ellipsometry. Appl Phys Lett,2001,78:3962.
  • 10Jellison G E Jr, Merkulov V I, Puretzky A A, et al. Characterization of thin-film amorphous semiconductors using spec-roscopic ellipsometry. Thin Solid Films,2000,377/378:68.

二级参考文献16

  • 1Arndt D P,Azzam R M A,Bennett J M,et al.Multiple determination of the optical constants of thin-film coating materials.Appl Opt,1984,23:3571
  • 2Swanepoel R.Determination of the thickness and optical constants of amorphous silicon.J Phys E,1983,16:1214
  • 3Davazoglou D.Determination of optical dispersion and filmthickness of semiconducting disordered layers by transmission measurements:Application for chemically vapor deposited Si and SnO2 film.Appl Phys Lett,1997,70:246
  • 4Forouhi A R,Bloomer I.Simultaneous determination of thickness and optical constants of thin films.SPIE,1995,2439:126
  • 5Mulato M,Chambouleyron I,Birgin E G,et al.Determination of thickness and optical constants of amorphous silicon films from transmittance data.Appl Phys Lett,2000,77:2133
  • 6Chambouleyron I,Ventura S D,Birgin E G,et al.Optical constants and thickness determination of very thin amorphous semiconductor films.J Appl Phys,2002,92:3093
  • 7Poelman D,Smet P F.Methods for the determination of the optical constants of thin films from single transmission measurements:a critical review.J Phys D,2003,36:1850
  • 8Forouhi A R,Bloomer I.Optical dispersion relations for amorphous semiconductors and amorphous dielectrics.Phys Rev B,1986,34:7018
  • 9Forouhi A R,Bloomer I.Optical properties of crystalline semiconductors and dielectrics.Phys Rev B,1986,38:1865
  • 10Davazoglou D.Optical absorption threshold of low pressure chemically vapor deposited silicon oxynitride films from SiCl2H2-NH3-N2O mixtures.Thin Solid Films,2003,437:266

共引文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部