高浓度离子注入砷隐埋层技术

Technique of As Buried-Layer Doped By High Density Ion Implant

高浓度离子注入砷隐埋层技术与扩散锑埋层技术相比，具有表面浓度高，硅表面无合金点等优点。应用该技术成功地研制了具有国际先进水平的“DYL多元逻辑八位高速机频D／A转换器”集成电路。

A technique of As buried-layer doped by high density ion implant is presented in this paper. Compared with Sb burried-layer,this method have some advantage, such as high surface density,no alloy - dot etc. Used by this method,an international advanced integrated circuit-'DYL muitiple -unit 8 - bit high speed visual frequency D/A convertor is successfully fabricated.