水热法合成Zn_(1-x)Ni_xO稀磁半导体

Hydrothermal Synthesis of Zn_(1-x)Ni_xO Room Temperature DMS

本文采用水热法,在温度430℃,填充度35%,矿化剂为3mol/L KOH,前驱物为添加适量N iC l2.6H2O的Zn(OH)2,反应时间24h,合成了Zn1-xN ixO稀磁半导体晶体。当在Zn(OH)2中添加一定量的N iC l2.6H2O为前驱物,水热反应产物为掺杂N i的多种形态ZnO混合晶体,对其个体较大的晶体中进行电子探针测量表明,前驱物中的添加量和晶体中实际掺入量有很大的差异,只有少量的N i离子掺入ZnO,最大N i原子分数含量为0.62%。采用超导量子干涉磁强计测量材料的磁性,发现在室温以下,晶体的磁化强度不随温度升高而下降。在室温下,存在明显的磁饱和现象和磁滞回线,说明具有室温下的铁磁性。

Diluted magnetic semiconductor （DMS） Zn1-xNixO crystals were synthesized at 430℃ for 24 hours by hydrothermal method. The mineralizer is 3mol/L KOH, and fill factor is 35%. Many different shapes of Ni doped ZnO crystals were synthesized by hydrothermal reaction when the Zn （OH） 2 doped with NiCl2·6H2O was used as the precursor. The larger crystal was determined by electron probe. We found that the atomic percentage of Ni in the crystal was different from the concentration of NiCl2·6H2O in the precursor. Only a little Ni was doped in the ZnO, the maximum of Ni concentration in the crystal is 0.62%. The measurement of magnetism was carried out by using a superconducting quantum interference device （SQUID） above the room temperature, the magnetization rate didn＇ t decrease as the temperature rised,but the hysteresis loop of Zn1-xNixO crystals was obtained under the room temperature, and the crystals show a ferromagnetism under the room temperature.