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Mechanism of scaling on oxidation reactor wall in TiO_2 synthesis by chloride process

Mechanism of scaling on oxidation reactor wall in TiO_2 synthesis by chloride process
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摘要 The mechanism of scaling on the oxidation reactor wall in TiO2 synthesis process was investigated. The formation of wall scale is mostly due to being deposited and sintered of TiO2 particle formed in the gas phase reaction of TiCl4 with O2. The gas-phase oxidation of TiCl4 was in a high temperature tubular flow reactor with quartz and ceramic rods put in center respectively. Scale layers are formed on reactor wall and two rods. Morphology and phase composition of them were characterized by transmission electron microscope(TEM), scan electron micrographs(SEM) and X-ray diffraction(XRD). The state of reactor wall has a little effect on scaling formation. With uneven temperature distribution along axial of reactor, the higher the reaction temperature is,the thicker the scale layer and the more compact the scale structure is. The mechanism of scaling on the oxidation reactor wall in TiO2 synthesis process was investigated. The formation of wall scale is mostly due to being deposited and sintered of TiO2 particle formed in the gas phase reaction of TiCl4 with O2. The gas-phase oxidation of TiCl4 was in a high temperature tubular flow reactor with quartz and ceramic rods put in center respectively. Scale layers are formed on reactor wall and two rods. Morphology and phase composition of them were characterized by transmission electron microscope(TEM), scan electron micrographs(SEM) and X-ray diffraction(XRD). The state of reactor wall has a little effect on scaling formation. With uneven temperature distribution along axial of reactor, the higher the reaction temperature is, the thicker the scale layer and the more compact the scale structure is.
出处 《中国有色金属学会会刊:英文版》 EI CSCD 2006年第2期426-431,共6页 Transactions of Nonferrous Metals Society of China
关键词 氯化法 二氧化钛 反应堆 氧化 TiO2 synthesis scaling reactor wall oxidation chloride process
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  • 1Heim D, Holler F, Mitterer C. Hard coatings produced by PACVD applied to aluminum die casting [J].Surf Coat Technol, 1999,116 - 119:530 - 536.
  • 2MA Sheng-li, LI Yan-huai, NAN Jun-ma, et al. Plasma enhanced chemical vapor deposited TiN/TiCN multilayer coatings [J]. Trans Nonferrous Met Soc China,2000,10(3) : 489 - 492.
  • 3Pfohl C, Teichmann G A, Rie K T. Application of wear-resistant PACVD coatings in aluminium die casting: economical and ecological aspects [J]. Surf Coat Technol, 1999, 112: 347- 350.
  • 4Rie K T, Whole J. Spectroscopic investigation of N2-H2-Ar-TiCl4 assisted vapor deposition discharge for plasma of TiN [J]. Materials Science and Engineering, 1991, A139:37-40.
  • 5Mogensen K S, Mathiasen C, Eskildsen S S, et al.The time development of pulsed DC production plasmas used for deposition of TiN [J]. Surf Coat Technol, 1998, 102: 35-40.
  • 6Heim D, Hochreiter R. TiAIN and TiAICN deposition in an industrial PACVD plant [J]. Surf Coat Technol,1998, 98: 1553-1556.
  • 7Soltani A, Thevenin P, Bath A. Formation and characterization of c-BN thin film deposited by microwave PECVD [J]. Diamond and related materials, 2001,10:1369 - 1374.
  • 8Marlid B, Larsson K, Carlsson J O. Nucleation of c-BN from PECVD and TACVD growth species: a theoretical study [J]. Diamond and Related Materials,2001.10: 1363 - 1368.
  • 9Rie K T, Gebauer A, Woehle J. Investigation of PACVD of TiN: relations between process parameters,spectroscopic measurements and layer properties [J].Surf Coat Technol, 1993, 60:385 - 388.
  • 10Eckel M, Hardt P. Investigation of TiN deposition in different sized PACVD reactors by means of optical emission spectroscopy [J]. Surf Coat Technol, 1999,116- 119:1037 - 1041.

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