化学气相沉积法制取异型钨制品研究

Preparation of Shaped Tungsten Product by Chemical Vapor Deposition

采用化学气相沉积的方法,以WF6和H2为原料,通过气相反应成功地沉积出多种异型致密钨制品.实验结果表明：沉积层显微组织呈柱晶沿（200）晶面择向生长,具有高纯度（〉99.8%）,高致密度（〉19.2 g/cm^3）,沉积速度可达2～3 mm/h. 采用化学气相沉积法制备钨制品,设备简单,工艺稳定可靠,且制品质量较高,特别适合于异型制品的制备,是一种具有广泛应用前景的钨制品制备方法.

Using WF6 and H2 as precursors, many kinds of dense shaped tungsten products were successfully developed by chemical vapor deposition. The results show that the deposit is of high purity （〉99.8%） and high density （〉19.2 g/cm^3）. The microstructure of deposit is columnar crystal with preferential growth in the direction of （200）. The deposition rate can be 2～3 mm/h. The application of chemical vapor deposition method in preparing shaped tungsten product possesses a bright future due to simple equipment, reliable process and the product of high quality.