掺锡氧化锌变阻器的制备和性能研究

PREPARATION AND PROPERTIES OF TIN DOPED ZnO-BASED VARISTOR

本文采用液相沉淀法以SnC l2.H2O代替SbC l3制备了ZnO(含有5%的B i,Mn,Co,Sn)变阻器.通过SEM和XRD技术确定了我们制备的ZnO基变阻器的晶相及其分布情况,结果表明微观结构包括ZnO主相,Zn2SnO4尖晶石相和富B i2O3相.分析了SnO2对变阻器电性能的影响.当SnO2含量增加时,漏电流明显增大;而非线性系数只对低浓度的SnO2有明显的依赖关系,且存在一个使非线性系数达到极值的临界浓度(1.0 mol%).SnO2的含量对压敏电压没有明显的影响.添加适当含量的B i2O3会提高变阻器的电性能,而过量时则会使变阻器性能劣化.我们得到了漏电流为0.34 A,非线性系数为62,压敏电压为1063V1 mA/mm性能良好的变阻器.

Substituting the traditional additive SbCl3 with SnCl2 · 2H2O, ZnO varistor （ plus 5% Bi, Mn, Co and S） was prepared. The crystalline phases of the multicomponent varistor were investigated by SEM and XRD technology. We observed the multicomponent varistor contains the following crystalline phase： ZnO main phase, Zn2SnO4 type -spinel phase and Bi2O3 -rich phase. With the larger addition of SnO2, there is a significant increase in leakage current α and the nonlinear coefficient α increase to a maximum and then remain nearly unchanged. The breakdown voltage was not influenced by the increase of SnO2. The addition of Bi2O3 can improve the performance of the varistor but too much Bi2O3 is bad for the electrical characteristics. The ZnO varistor produced by this method exhibits excellent nonlinear current - voltage characteristics with leakage current IL ≈0.34μA, nonlinear coefficient α≈62.0 and breakdown voltage VB≈1063 V1 mA/mm .