薄膜生长的Monte Carlo模拟

Monte Carlo Simulation of Thin Films Growth

用MonteCalro方法通过matlab对薄膜外延生长进行了计算机模拟.模型中引入Morse势描述粒子间的相互作用,考虑粒子的沉积、吸附粒子的扩散和蒸发3个过程.研究了粒子间相互作用范围和允许粒子行走的最大步数对薄膜生长形貌的影响.结果表明:在不同的值下,随粒子行走步数的增加,薄膜的生长都经历了从分散、分形、混合到团聚的过程;在同一最大步数下,值越大,薄膜越易趋向于分散生长.

The cpitaxial growth of thin film is simulated by Monte Carlo method with Matlab. The effect of the interaction between particles is described using Morse potential. We consider particle deposition, adatom diffusion and adatom evaporation. The effects of the range of interparticle interaction a and the maximum steps that a particle is permitted to migrate on the thin film are investigated. The results show that under different athe films＇ growth all undergos four stages： disperse, fractal, mixture offi＇actal and conglobating, and conglobating with the increase of particle＇ s migration steps, and that under the same maximum steps the more theathe more easily the thin film tend to be in disperse growth.