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脉冲激光沉积法制备ZnO薄膜的研究进展 被引量:2

Recent Advances of ZnO Films Prepared by Pulsed Laser Deposition
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摘要 基于氧化锌薄膜紫外光发光的实现,ZnO薄膜成为新的研究热点。综述了各种沉积条件对脉冲激光沉积(PLD)技术生长的氧化锌薄膜的微结构、光学和电学性质的影响,ZnO薄膜的厚度在超过400 nm时,呈现出了近似块状的性质。采用PLD技术,可以在适当的条件下制备具有特定功能的氧化锌薄膜。 Reviewed were the effects of various deposition conditions on microstructural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD) technology. It is believed that ZnO films thicker than 400 nm are almost strain-free and exhibit near-bulk ZnO properties. ZnO films with special function can be grown under proper conditions by PLD.
出处 《电子元件与材料》 CAS CSCD 北大核心 2006年第5期9-12,共4页 Electronic Components And Materials
基金 国家自然科学基金资助项目(No.90301002 90201025)
关键词 半导体技术 脉冲激光沉积 综述 氧化锌薄膜 衬底温度 氧分压 semiconductor technology PLD review ZnO thin film substrate temperature oxygen pressure
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参考文献14

  • 1Bae S H, Lee S Y, Jin B J, et al. Pulsed laser deposition of ZnO thin films for applications of light emission [J]. Appl Surf Sci, 2000, 154-155:458-461.
  • 2Dijkkamp D, Venkatesan T, Wu X D, et al. Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material [J]. Appl Phys Lett, 1987, 51 (8): 619-621.
  • 3Vasco E, Zaldo C, Vázquez L, et al. Growth evolution of ZnO films deposited by pulsed laser ablation [J]. J Phys: Condens Matter, 2001, 13:663-672.
  • 4何建廷,庄惠照,薛成山,王书运.PLD法生长硅基ZnO薄膜的特性[J].电子元件与材料,2005,24(5):24-26. 被引量:5
  • 5Bae S H, Lee S Y, Jin B J, et al. Growth and characterization of ZnO thin films grown by pulsed laser deposition [J]. Appl Surf Sci, 2001, 169-170:525-528.
  • 6Im S, Jin B J, Yi S, et al. Ultraviolet emission and microstructural evolution in pulsed-laser-deposited ZnO films [J]. J Appl Phys, 2000, 87(9):4558-4561.
  • 7Adachi Y, Ryouken H, Sakaguchi I, el al. Effect of oxygen source and buffer layer on crystal structure and electric properties of ZnO films grown by pulsed laser deposition [J]. Key Eng Mater, 2003, 248: 83-86.
  • 8Bae S H, Lee S Y, Kim H Y, et al. Comparison of the optical properties of ZnO thin films grown on various substrates by pulsed laser deposition [J].Appl Surf Sci, 2000, 16: 332-334.
  • 9Vanheusden K, Seager C H, Waren W L, et al. Correlation between photoluminescence and oxygen vacancies in ZnO phosphors [J]. Appl Phys Lett, 1996, 68: 403-405.
  • 10Kang H S, Kang J S, Pang S S, et al. Variation of light emitting properties of ZnO thin films depending on post-annealing temperature [J]. Mater Sci Eng B, 2003, 102: 313-316.

二级参考文献22

  • 1李贻杰.准分子激光蒸发──一种新型的镀膜技术[J].物理,1993,22(3):174-179. 被引量:2
  • 2Wong J,Appl Phys,1974年,46卷,4期,1653页
  • 3陈正豪,物理,1995年,24卷,719页
  • 4Gong J,Jpn J Appl Phys,1993年,32卷,L687页
  • 5Zhao Z X,Chin Sci Bull,1987年,32卷,681页
  • 6Mu M K,Phys Rev Lett,1987年,58卷,908页
  • 7熊旭明,科学通报,1997年,42卷,1265页
  • 8周岳亮,Chin Sci Bull,1996年,41卷,1938页
  • 9Zhou Y L,J Supercond,1996年,9卷,625页
  • 10Wu X D,Appl Phys Lett,1995年,67卷,2397页

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