Zr掺杂TaO_x薄膜离子导体性能的研究

Study on Properties of TaO_x Films Ion Conductor Doped with Zr

采用射频反应磁控溅射工艺,以纯钽、锆为靶材,在WO3/ITO/玻璃基材上制备TaOx:Zr薄膜。研究锆掺入量、掺杂方式、溅射功率等制备工艺参数对TaOx薄膜性能的影响。用三位电极法和透射光谱等方法检测薄膜的离子导电性能。结果表明:TaOx:Zr薄膜主要为非晶态,在150 W的掺杂溅射功率和10 min的相对掺杂时间的实验条件下,所制备的TaOx:Zr薄膜有良好的离子导电性能,透光率约为90%。

Using pure tantalum and zirconium as targets, the TaOx film doped with Zr was deposited on WO3/ITO/Glass substrates by radio-frequency reactive magnetron sputtering, The effects of doping contents, doping ways and sputtering power on ion conduct properties and structure were studied. The results show that TaOx： Zr film deposited by magnetron sputtering method is amorphous, its ion conductor properties are improved when the relative doping time is 10 min, and the sputtering power is 150 W. Transmission of thin film is about 90%.