直流反应磁控溅射法制备锐钛矿TiO_2薄膜

Anatase Titanium Dioxide Film Deposited by DC Reactive Magnetron Sputtering

采用直流反应磁控溅射的方法,溅射高纯钛靶在玻璃衬底上制备了TiO2薄膜。用XRD测试了TiO2薄膜的结构,研究了工艺因素中衬底温度、溅射气压、氧氩气体流量比和退火温度对薄膜结构的影响。实验结果表明:衬底温度高于200℃、溅射气压不高于0.7 Pa、氧氩流量比为1/4、退火温度为650℃时,锐钛矿TiO2薄膜更容易结晶。

TiO2 thin films have been sputtered on glass substrate by DC reactive magnetron sputtering. The microstructure has been tested by X-ray diffraction. The effects of growth conditions such as substrate temperature sputtering pressure, O2/Ar ratio and annealing temperature on the microstructure of TiO2 thin films have been investigated. The experimental results show that substrate temperature above 200 ℃, sputtering pressure not higher than 0.7 Pa, O2/Ar flow volume ratio at 1/4, and annealing temperature at 650 ℃ are beneficial to the crystallization of TiO2 thin films.