摘要
Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metalorganic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T - 380 K with hysteresis curves showing a coercivity of 50-100 Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.
Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metalorganic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T - 380 K with hysteresis curves showing a coercivity of 50-100 Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 60376005, 60577030, 60325413, and 60444007.
