S波段小型化微带低噪声放大器的研制

Design of S-Band Mini Microstrip Low Noise Amplifier

对具有极低噪声系数的超小型微带放大器进行了设计和讨论。与以往同类工作有很大不同,为了实现LNA小型化的目的,对匹配电路和直流偏置网络采用多次曲折线的形式。常规的纯电路模型仿真方法失效,而采用场路混合仿真的方法。结果表明:采用多次曲折线的形式使实际样品加工尺寸大大缩小;场路混合仿真的设计方法精度高,样品实测性能大大优于预期指标。

S-band mini microstrip low noise amplifier（LNA） is designed and discussed. Greatly different from previous works, the matching circuits and DC bias networks are bent many times, for minimizing the LNA. The conventional only circuit model simulation method is out of effect, so the field-circuit mix simulation method is adopted. The conclusion is that the designed LNA has smaller manufacture size and better measurement results than the conventional one.